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1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot457 (sc-74) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? r dson specified at 1.8 v operation ? trench mosfet technology ? fast switching 1.3 applications ? relay driver ? high-speed line driver ? high-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 2. pinning information PMN80XP 20 v, single p-channel trench mosfet rev. 1 ? 8 may 2012 product data sheet sot457 table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t amb =25c ---20v v gs gate-source voltage -12 - 12 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---3.2a static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d =-2.5a; t j = 25 c - 80 102 m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 d drain sot457 (tsop6) 2 d drain 3 g gate 4ssource 5 d drain 6 d drain 13 2 4 56 s d g 017aaa257
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 2 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 3. ordering information 4. marking 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. table 3. ordering information type number package name description version PMN80XP tsop6 plastic surface-mount ed package (tsop6); 6 leads sot457 table 4. marking codes type number marking code PMN80XP wa table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t amb =25c - -20 v v gs gate-source voltage -12 12 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] --3.2a v gs =-4.5v; t amb =25c [1] --2.5a v gs =-4.5v; t amb =100c [1] --1.6a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -10 a p tot total power dissipation t amb =25c [2] - 385 mw [1] - 925 mw t sp = 25 c - 4000 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] --1a
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 3 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet fig 1. normalized total power dissipation as a function of junction temperature fig 2. normalized continuous drain current as a function of junction temperature i dm = single pulse (1) t p = 100 s (2) t p = 1 ms (3) t p = 10 ms (4) dc; t sp = 25 c (5) t p = 100 ms (6) dc; t amb = 25 c; drain mounting pad 6 cm 2 fig 3. safe operating area; junction to ambient; continuo us and peak drain currents as a function of drain-source voltage t j (c) ?75 175 125 25 75 ?25 017aaa123 40 80 120 p der (%) 0 t j (c) ?75 175 125 25 75 ?25 017aaa124 40 80 120 i der (%) 0 017aaa528 -1 -10 -1 -10 -10 2 i d (a) -10 -2 v ds (v) -10 -1 -10 2 -10 -1 (1) (2) (3) (4) (5) (6) limit r dson = v ds /i d
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 4 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 [3] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 , t 5 s table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 281 325 k/w [2] - 116 135 k/w [3] - 7385k/w r th(j-sp) thermal resistance from junction to solder point - 2731k/w fr4 pcb, standard footprint fig 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa529 10 1 10 2 10 3 z th(j-a) (k/w) 10 -1 10 -5 10 10 -2 10 -4 10 2 10 -1 t p (s) 10 -3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 5 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet fr4 pcb, mounting pad for drain 6 cm 2 fig 5. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa530 10 1 10 2 10 3 z th(j-a) (k/w) 10 -1 10 -5 10 10 -2 10 -4 10 2 10 -1 t p (s) 10 -3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 6 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =-250a; v gs =0v; t j =25c -20--v v gsth gate-source threshold voltage i d =-250a; v ds =v gs ; t j = 25 c -0.45 -0.75 -1 v i dss drain leakage current v ds =-20v; v gs =0v; t j =25c ---1a v ds =-20v; v gs =0v; t amb = 150 c - - -10 a i gss gate leakage current v gs =12v; v ds =0v; t j = 25 c - - -100 na v gs =-12v; v ds =0v; t j = 25 c - - -100 na r dson drain-source on-state resistance v gs =-4.5v; i d =-2.5a; t j = 25 c - 80 102 m ? v gs =-4.5v; i d =-2.5a; t j = 150 c - 116 148 m ? v gs =-2.5v; i d =-2.3a; t j = 25 c - 95 125 m ? v gs =-1.8v; i d =-1.1a; t j = 25 c - 120 156 m ? g fs forward transconductance v ds =-10v; i d =-2.5a; t j =25c - 15 - s dynamic characteristics q g(tot) total gate charge v ds =-10v; i d =-2.5a; v gs =-4.5v; t j =25c -57.5nc q gs gate-source charge - 0.7 - nc q gd gate-drain charge - 0.9 - nc c iss input capacitance v ds = -10 v; f = 1 mhz; v gs =0v; t j =25c - 550 - pf c oss output capacitance - 63 - pf c rss reverse transfer capacitance -53-pf t d(on) turn-on delay time v ds =-10v; i d =-2.5a; v gs =-4.5v; r g(ext) =6 ? ; t j =25c -6-ns t r rise time - 14 - ns t d(off) turn-off delay time - 120 - ns t f fall time - 50 - ns source-drain diode v sd source-drain voltage i s =-1.0a; v gs =0v; t j = 25 c - -0.8 -1.2 v
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 7 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet t j = 25 c t j = 25 c; v ds = -5 v fig 6. output characteristics: drain current as a function of drain-source voltage; typical values fig 7. sub-threshold drain current as a function of gate-source voltage t j = 25 c i d = -3 a fig 8. drain-source on-state resistance as a function of drain current; typical values fig 9. drain-source on-state resistance as a function of gate-source voltage; typical values v ds (v) 0-4 -3 -1 -2 017aaa531 -4 -6 -2 -8 -10 i d (a) 0 v gs = -1.8 v -10 v -4.5 v -2.5 v -2 v -1.6 v -1.5 v -1.4 v -1.2 v -1 v 017aaa532 -10 -4 -10 -3 i d (a) -10 -5 v gs (v) 0 -1.00 -0.75 -0.25 -0.50 min typ max i d (a) 0-4 -3 -1 -2 017aaa533 0.10 0.15 0.05 0.20 0.25 r dson () 0 -1.3 v v gs = -1.4 v -1.6 v -1.8 v -2.5 v -4.5 v v gs (v) 0-4 -3 -1 -2 017aaa534 0.2 0.1 0.3 0.4 r dson () 0 t j = 150 c t j = 25 c
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 8 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet v ds > i d r dson fig 10. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 11. normalized drain-source on-state resistance as a function of junction temperature; typical values i d = -0.25 ma; v ds = v gs f = 1 mhz; v gs = 0 v fig 12. gate-source threshold voltage as a function of junction temperature fig 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values v gs (v) 0 -2.5 -2.0 -1.0 -1.5 -0.5 017aaa535 -4 -6 -2 -8 -10 i d (a) 0 t j = 150 c t j = 25 c t j (c) -60 180 120 060 017aaa536 1.0 0.5 1.5 2.0 a 0 t j (c) -60 180 120 060 017aaa537 -1.0 -0.5 -1.5 -2.0 v gs(th) (v) 0 min typ max 017aaa538 v ds (v) -10 -1 -10 2 -10 -1 10 2 10 3 c (pf) 10 c iss c oss c rss
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 9 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet i d = -3 a; v ds = -10 v; t amb = 25 c fig 14. gate charge waveform definitions fig 15. gate charge waveform definitions v gs = 0 v fig 16. source current as a function of source-drain voltage; typical values q g (nc) 012 9 36 017aaa539 -4 -8 -12 v gs (v) 0 017aaa137 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) v ds (v) 0 -1.4 -1.2 -0.4 -0.8 017aaa540 -2 -1 -3 -4 i s (a) 0 t j = 25 c t j = 150 c
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 10 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 8. test information 9. package outline fig 17. duty cycle definition t 1 t 2 p t 006aaa812 duty cycle = t 1 t 2 fig 18. package outline sot457 (tsop6) 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 11 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 10. soldering fig 19. reflow soldering footprint for sot457 (tsop6) fig 20. wave soldering footprint for sot457 (tsop6) solder lands solder resist occupied area solder paste sot457_fr 3.45 1.95 2.8253.3 0.45 (6) 0.55 (6) 0.7 (6) 0.8 (6) 2.4 0.95 0.95 dimensions in mm sot457_fw 5.3 5.05 1.45 (6) 0.45 (2) 1.5 (4) 2.85 1.475 1.475 solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 12 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 11. revision history table 8. revision history document id release date data sheet status change notice supersedes PMN80XP v.1 20120508 product data sheet - -
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 13 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at urlhttp://www.nxp.com . 12.2 definitions preview ? the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any re presentations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and r eplaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. document status [1] [2] product status [3] definition objective [short] data sheet development this document contai ns data from the objective spec ification for product developmen t. preliminary [short] data sheet qua lification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
PMN80XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 8 may 2012 14 of 15 nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms an d conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey, g reenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PMN80XP 20 v, single p-channel trench mosfet ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 8 may 2012 document identifier: PMN80XP please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .1 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 6 thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . .10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 12 legal information. . . . . . . . . . . . . . . . . . . . . . . .13 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 13 contact information. . . . . . . . . . . . . . . . . . . . . .14

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